High-Speed E-Mode InAs QW MOSFETs With Al2O3 Insulator for Future RF Applications
نویسندگان
چکیده
We demonstrate Lg = 100 nm high-speed enhancement-mode (E-mode) InAs quantum-well MOSFETs with outstanding high-frequency and logic performance. These devices feature a 3-nm Al2O3 layer grown by atomic layer deposition. The MOSFETs with Lg = 100 nm exhibit VT = 0.2 V (E-mode), RON = 370 Ω · μm, S = 105 mV/dec, DIBL = 100 mV/V, and gm_max = 1720 μS/μm at VDS = 0.5 V. They also have an excellent high-frequency response of fT = 248 GHz and fmax = 302 GHz at VDS = 0.5 V, the highest fT and fmax in III–V MOSFETs ever reported.
منابع مشابه
InAs Quantum - Well MOSFET ( L g = 100 nm ) for Logic and Microwave Applications
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